电学性能：半导体，拓扑绝缘体，热电材料
晶体结构：单斜晶结构
晶胞参数：a = 1.430nm，B = 0.403nm，C = 0.986nm，α=γ= 90°，β= 95.40
晶体类型：合成
晶体纯度：＞99.995%
表征方法：XRD、拉曼、EDX
Powder X-ray diffraction (XRD) of a single crystal As2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal As2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal As2Te3. Measurement was performed with a 785 nm Raman system at room temperature.