详情
晶体尺寸：10毫米
电学性能：半导体
晶体结构：斜方晶系
晶胞参数：a = 0.4025nm，B = 1.117nm，C = 1.135nm，α=β=γ= 9
晶体类型：合成
晶体纯度：＞99.995%
表征方法：XRD，拉曼，EDX，霍尔测量
电学性能：半导体
晶体结构：斜方晶系
晶胞参数：a = 0.4025nm，B = 1.117nm，C = 1.135nm，α=β=γ= 9
晶体类型：合成
晶体纯度：＞99.995%
表征方法：XRD，拉曼，EDX，霍尔测量
XRD of a single crystal Bi2S3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2S3.
Raman of a single crystal Bi2S3. Measurement with a 785nm Raman at room temperature.
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